| PART |
Description |
Maker |
| 2SA1290 |
60V/7A High-Speed Switching Applications 60V/7A高速开关应
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| RJQ6022DPM |
600V - 10A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC5865TLR |
High voltage discharge, High speed switching, Low Noise (60V, 1A)
|
Rohm
|
| 2SA1952 |
High-speed Switching Transistor (−60V/ −5A)
High-speed Switching Transistor (−60V, −5A)
High-speed Switching Transistor (-60V, -5A)
|
ROHM[Rohm]
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| 2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
|
Hitachi Semiconductor
|
| 2SA2073 |
High voltage discharge, High speed switching, Low Noise (−60V, −3A)
|
Rohm
|
| 2SC3307 E000825 |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS
|
Toshiba Semiconductor
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6012DPE RJL6012DPE-00J3 RJL6012DPE-12 RJL6012DP |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| 2SC4203 E000913 |
EPITAXIAL PLANAR TYPE (VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
VODEO OUTPUT FOE HIGH DEFINTION VDT HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
